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November 2013
FQPF33N10L
N-Channel QFET ? MOSFET
100 V, 18 A, 52 m Ω
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to reduce
on-state resistance, and to provide superior switching
performance and high avalanche energy strength. These
devices are suitable for switched mode power supplies,
audio amplifier, DC motor control, and variable switching
Features
? 18 A, 100 V, R DS(on) = 52 m ? (Max.) @ V GS = 10 V,
I D = 9 A
? Low Gate Charge (Typ. 30 nC)
? Low Crss (Typ. 70 pF)
? 100% Avalanche Tested
? 175°C Maximum Junction Temperature Rating
power applications.
D
D
G
S
TO-220F
G
S
Absolute Maximum Ratings
T C = 25°C unless otherwise noted.
Symbol
V DSS
Drain-Source Voltage
Parameter
FQPF33N10L
100
Unit
V
I D
Drain Current
- Continuous (T C = 25°C)
- Continuous (T C = 100°C)
18
12.7
A
A
I DM
Drain Current
- Pulsed
(Note 1)
72
A
V GSS
Gate-Source Voltage
± 20
V
E AS
I AR
E AR
dv/dt
P D
T J , T STG
T L
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T C = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8" from Case for 5 seconds
(Note 2)
(Note 1)
(Note 1)
(Note 3)
430
18
4.1
6.0
41
0.27
-55 to +175
300
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Thermal Characteristics
Symbol
R θ JC
R θ JA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient, Max.
FQPF33N10L
3.7
62.5
Unit
°C / W
°C / W
?2000 Fairchild Semiconductor Corporation
FQPF33N10L Rev. C1
1
www.fairchildsemi.com
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